표 3. | Table 3. Ku대역 GaN 고출력증폭기 집적회로 성능비교 | Performance comparison of Ku-band GaN high power amplifier MMIC.

Parameter	Unit	Ref. [3]	Ref. [4]	Ref. [5]	This work
Process	-	0.15 μm GaN HEMT	0.25 μm GaN HEMT	0.15 μm GaN HEMT	0.15 μm GaN HEMT
Configuration	-	2-stage Cascade	4-stage Cascade	3-stage Cascade	3-stage Cascade
Package type	-	Bare die	Bare die	Cu package	Bare die	Hermetic package
Frequency	GHz	13–15	15.25–16.25	13.75–14.5	14.5–16	14–16
Small signal gain	dB	25.2–27.5	33 @peak	29	32.1–35.0	30.6–33.8
Maximum pout	dBm	45–46.1	46	46	45.7–47.4	45.6–47
PAE	%	29.2–39	17	30	31.2–39.1	25.9–31.4
MMIC size	mm2	15	49.7	32.07	20.25