Ref. | This work | Ref. | Ref. | Ref. |
---|---|---|---|---|
Process | 130 nm SOI | 0.18 | 0.25 | 65 nm CMOS |
Frequency (GHz) | 10~15 | 22~29 | 6~12.5 | DC~50 |
Return loss (dB) | >14.58 | >9.9 | >13 | >12 |
Insertion loss (dB) | <1.85 | <7.9 | <12.7 | <5.9 |
Attenuation range (dB) | 15.5 | 14.5 | 16.51 | 15.5 |
RMS GE (dB) | <0.24 | <0.51 | <0.26 | 0.2 @dc-28G |
RMS PE (degree) | <4.49 | <4.7 | <3.5 | 2.6 @dc-28G |
Chip area (mm2) | 0.03 | 0.94 | 0.29 | 0.036 |