표 2. | Table 2. 전력증폭기 성능 요약 및 비교 | Performance summary and comparisons of power amplifier.
Ref. | CMOS technology | Amplifier topology | Supply [V] | Gain [dB] | Freq. [GHz] | S21 BW3dB [GHz] | Psat [dBm] |
[4] | 28 nm CMOS | 1stage 2stack | 2.2 | 13.6 | 28 | - | 19.8 |
[5] | 28 nm CMOS | 2stage CS | 0.9 | 20.8 | 43 | 29~57 | 16.6 |
[6] | 65 nm CMOS | 1stage 3stack | 3.6 | 17.5 | 38 | - | 24.8 |
[7] | 28 nm CMOS | 2stage 2stack | 0.9/1.8 | 25.8 | 38.5 | - | 16.8 |
[8] | 45 nm SOI | 2stage 2stack | 1/2 | 20.5 | - | 25.8~43.4 | 20.4 |
[9] | 28 nm CMOS | 2stage 2stack | 0.9/1.8 | 20.5 | - | 19.7~43.8 | 20.3 |
This work | 40 nm CMOS | 2stage 2stack | 0.9/1.8 | 27.8 | 34.6 | 30.2~38.5 | 16.9 |