표 1. | Table. 1. 저잡음 증폭기 성능 비교 | Comparison of published low noise amplifiers.

Ref.	TCSII’ 22[1]	EuMIC’ 23[2]	IMS’ 23[5]	TMTT’ 16[6]	This work
Technology	40 nm CMOS	28 nm CMOS	40 nm CMOS	28 nm CMOS	40 nm CMOS
Freq. (GHz)	180	129~157.5	115.7~139.7	104~132	135.5~150.9
Topology	7 embedded CS	2×CS+3×Cascode	5-stage CS Diff.	4-stage CS Diff.	5-stage CS Diff.
Peak gain (dB)	14.8	16.3	19.7	21.7	21.8
3 dB BW (GHz)	11	28.5	24	28	15.4
Noise figure (dB)	11*	9.6	7.9	8.4	8.7(average)
PDC (mW)	23.9	38.8	17.8	18	46
Area (mm2)	0.15 (core area)	0.62 (including pad)	0.07 (core area)	0.12 (core area)	0.08 (core area)

Simulation value.