표 2. | Table 2. 이전 관련 연구들과의 성능 비교 | Performance comparison with previous related research.

Ref.	Techn.	Design	Freq. [GHz]	Gain [dB]	NF [dB]	Pdc [mW]	Size [mm2]	FoM
[10] ESSC’2016	65 nm CMOS	Shunt-peaking	5.1~6.1	26.8	5.1	13.5	0.07^#	0.72^*
[11] TMTT’2017	130 nm CMOS	Phase-change RF switch	3	21.2	2.5	7.2	0.81^#	2.04
[11] TMTT’2017	130 nm CMOS	Phase-change RF switch	5	21.9	2.7	3.6	0.9^#	4.01
[12] TCSII’2018	180 nm CMOS	CS-CG w.FF^**	2-5	13	6-8	1.8	2.25	0.83
[13] MWCL’2021	180 nm CMOS	Body floating self-bias	7.5~10.7_@LN	7.5~10.7	3.41	3.3	0.739	0.60~0.87
[13] MWCL’2021	180 nm CMOS	Body floating self-bias	6.4~9.4_@LP	6.4~9.4	3.89	1.36	0.739	1.06~1.49
This Work	90 nm RF-SOI	RC FB^$and Ind.-peaking	3.3~4.2	21.2~17.03_@HGM	1.79~1.72	12	1.65	1.87~1.21
		RC FB^$and Ind.-peaking	3.3~4.2	−4.3~−5.34_@BM	5.0~5.98			−
		RC feedback	4.4~5.0	18.6~18.04_@HGM	1.4~1.53			1.86~1.57
		−6.1~−7.2_@BM	6.88~7.9					−

Calculated LNA from photograph
SW+TX+LNA
Feed-Forward noise cancellation
Feedback, @LN (lownoise), @LP (lowpower), @HGM (high gain mode) @BM (bypass mode)