표 1. | Table 1. D-대역 CMOS 전력 증폭기 성능 비교 | Comparison of D-band CMOS power amplifiers.

	This work	Ref. [5]	Ref. [6]	Ref. [7]	Ref. [8]	Ref. [9]	Ref. [10]	Ref. [11]
Technology/topology	40-nm CMOS/4-stage 1-way	28-nm CMOS/3-stage 4-way	28-nm CMOS/3-stage 2-way	65-nm CMOS/5-stage 1- way	45-nm CMOS RFSOI 4-way diff	45-nm CMOS SOI/4-stage	22-nm CMOS FD-SOI/3-stage 4-way	40-nm CMOS/4-stage 1-way
Frequency (GHz)	120	138	138	140	140	160	130	130
Gain (dB)	22.3	22.6	19.2	27.32	22.2 / 24	18	13.5	22.5
3-dB BW (GHz)	106~13327	124~15228	127~15023	135~14510	130~151133~14821/15	146~17428	111~14938	122~13715
FBW (%)	22	20	16	7	15	17.5	29	11.5
PAE (%)	9.3	8.6	15.4	6.4	13.4/11	6.8	16.5	7.1
Psat (dBm)	9.4	16.2	15.4	10.7	17.5 / 18.5	8.8	17.5	7.7
P1dB (dBm)	5.9	11.4	11.2	7.2	14.2/13.5	5	N/A	5
Pdc (mW)	76	368	381	170	N/A	92	N/A	81
Area (mm2)	0.052*0.25**	0.33*	0.091*0.31**	0.027*	0.43*/0.46*	0.04*0.28**	0.113*	0.065*

Chip area for core.
Chip area including pad.