표 1. | Table 1. 하향 변환 믹서 성능 비교 | Comparison with other works.

Ref.	This work	[3]	[4]	[2]
Tech.	65 nm CMOS	65 nm CMOS	65 nm CMOS	90 nm CMOS
Topology	LCL Q-boosted MN	TML	Inductance gm-boosted	TML, Marchand Balun
Freq. [GHz]	77~81	75~90	75~81	75~85
Conv. gain [dB]	−5.5~−7.5	5	1.6	−1~1.5
LO power [dBm]	>−9	0	−5	5
RF-LO Iso. [dB]	>37.3	>33	>38	>43.5
IP1dB [dBm]	0	2.5	−16.2	−9
IIP3 [dBm]	9*	13.2	−6.6	2.7
NF [dB]	9.6*	N/A	13	23.3
Pdc [mW]	0	12	12	13
Type	Passive	Active	Active	Active
IF buffer	N	Y	N	Y
Area [mm2]	0.056	0.14	0.31	0.62

Simulation results