표 1. | Table 1. CG2H80060D GaN HEMT Bare Die 주요 특성 | CG2H80060D GaN HEMT Bare Die main characteristics.

Form	Discrete bare die
Die thickness	100 μm(GaN on Sic)
Frequency range	up to 8 GHz Operation
Saturated power(Psat)	60 W(@4 GHz)
Small signal gain	15 dB @ 4 GHz,
12 dB @ 8 GHz
Drain efficiency(DE)	65 % @ 60 W
Operation drain-source voltage	28 V
Gate quiescent voltage	−2.78 V (VDD=28 V, IDQ=500 mA)
Drain-source breakdown voltage	120 V
Maximum drain current	6 A
Operation junction temperature	225 °C