표 1. | Table 1. Electrical blalance duplxer 성능 비교 | Comparison of electrical balance duplxer.

	Ref[3]	Ref[4]	Ref[5]	This work (simulation)
	20 MWCL	19 MWCL	18 MWCL	This work (simulation)
Technology	28-nm CMOS	65-nm CMOS	65-nm CMOS	65-nm CMOS
Type	EBD	EBD	EBD+LNA	EBD+LNA
Frequency [GHz]	28	0.7−0.9	1.6-2.2	14.3～15.9
Frequency [GHz]	28	1.7−2.0	1.6-2.2	14.3～15.9
Return loss [dB]	-	-	9.54	8.7
IL_{TX path} [dB]	3.3	< 4.3	3.6−3.95	< 4.3
IL_{TX path} [dB]	3.3	< 4.5	3.6−3.95	< 4.3
Gain_{RX path} [dB]	−4.04	<−4.3	21.1−24.8	> 18.04
Gain_{RX path} [dB]	−4.04	<−4.5	21.1−24.8	> 18.04
TX-RX isolation [dB]	> 24.6	> 50	> 50	< 39.3
Noise figure [dB]	-	-	6.4−6.8	5.21−5.23
Area [mm²]	0.054	1.17	1.19	0.28
P_dc [mW]	0	0	9.6	28.3