표 1. | Table 1. 저잡음 증폭기 성능 비교 | Performance comparison with other works.

Ref.	Process	Type	Peak gain (dB)	Peak gain frequency (GHz)	3-dB BW (GHz)	Noise figure (dB)	PDC(mW)	Chip area (mm2)
[5]	65-nm CMOS	6-stage combined cascode and CS	22.4	120	16	11.4*	61	NA
[6]	65-nm CMOS	8-stage CS	14.4	126	17	12	22.6	1.9
This work	28-nm CMOS FD SOI	3-stage CS	15.17	139	11	8.8*	27	0.255

Simulated value