표 2. | Table 2. 전력증폭기 성능 비교 | Comparison of power amplifier.

	Ref. [4] TMTT 2012	Ref. [5] TCAS II 2010	Ref. [6] RFIC 2016	This Work
Technology	90 nm	0.18 μm	0.25 μm	0.18 μm
Supply (V)	2	3.3	2.5	3.3
Frequency (GHz)	930	900	920	860~960
Psat (dBm)	29.4	29.5	N/A	27.6(Chip)
				26.7(CoB)
OP1 dB (dBm)	27.7	29	27	24.14
Gain (dB)	28	N/A	14.5	49.5
Peak PAE (%)	25.8	24	28	27.0(Chip)
				20.7(CoB)
Size (mm2)	3.33	3.58	4.84	2.14